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| Data Sheet No.PD60159-J IPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features * * * * * * * Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Product Summary Rds(on) V clamp Ishutdown Iopen load 25m (max) 50V 35A 1A Description The IPS5451/IPS5451S are fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The over-current protection latches off the device if the output current exceeds Ishutdown. It can be reset by turning the input pin low. The overtemperature protection turns off the high side switches if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of over-current, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out Dg H H H L L H H H L L X H H L (latched) L L L H H L (cycling) L (cycling) L L H Typical Connection + VCC + 5v 15K Status feedback Rdg Rin Packages Vcc Dg Logic control Out In Gnd Logic signal Load Logic Gnd Load Gnd 5 Lead SMD220 IPS5451S 5 Lead TO220 - IPS5451 www.irf.com 1 IPS5451/IPS5451S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (TAmbient = 25oC unless otherwise specified). Symbol Parameter Vout Voffset Vin Iin, max Vdg Idg, max Isd cont. Maximum output voltage Maximum Input voltage Maximum IN current Maximum diagnostic output voltage Maximum diagnostic output current Diode max. continuous current (1) (rth=62oC/W) IPS5451 (rth=80oC/W) IPS5451S Isd pulsed Diode max. pulsed current (1) ESD1 ESD2 Pd Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Maximum power dissipation(1) (rth=62oC/W) IPS5451 (rth=80oC/W) Tj max. Tlead IPS5451S Max. storage & operating junction temp. Lead temperature (soldering 10 seconds) Min. Vcc-45 -0.3 -5 -0.3 -1 -- -- -- -- -- -- -- -40 -- -- Max. Vcc+0.3 Vcc+0.3 5.5 10 5.5 10 2.8 2.2 45 4 0.5 2 1.56 +150 300 45 Units V Test Conditions Maximum logic ground to load ground offset Vcc-45 mA V mA A C=100pF, R=1500, kV C=200pF, R=0, L=10H W o C V Vcc max. Maximum Vcc voltage Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance junction to case junction to ambient with standard footprint with 1" square footprint junction to case Min. -- -- -- -- -- Typ. ## 60 35 # Max. Units Test Conditions a a a a a TO-220 o C/W D2PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 WWW.IRF.COM IPS5451/IPS5451S Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (TAmbient = 85oC, Tj = 125oC, Rth = 62oC/W) IPS5451 (TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W) IPS5451S Iout Continuous output current Tc=85oC (TCase = 85oC, IN = 5V, Tj = 125oC, Rth = 5oC/W) Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin Vcc VIH VIL 1 Iout Min. 5.5 4 -0.3 -- -- -- 4 10 Max. 18 5.5 0.9 4 3.5 14 6 20 Units V A k Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Rds(on) @Tj=25oC Min. -- -- -- 5.5 45 -- -- -- -- -- -- -- -- a 1 -- -- 3.0 0.2 Typ. 19 22 32 -- 49 50 0.9 10 3.5 3.5 20 0.1 1.5 2.7 2.0 30 4.7 4.4 0.6 Max. Units Test Conditions 25 30 -- 35 -- 60 1.2 50 50 10 -- 0.4 10 3.4 a 80 5.5 -- 1.5 Vin = 5V, Iout = 14A m Vin = 5V, Iout = 7A Vin = 5V, I out = 14A ON state resistance Tj = 25oC ON state resistance @ Vcc = 6V ON state resistance Tj = 150oC Functional operating range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Output leakage current Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Vcc UVLO positive going threshold Vcc UVLO negative going threshold Input hysteresis Rds(on) (Vcc =6V) Rds(on) @Tj=150 C o Vcc oper. V clamp 1 V clamp 2 Vf Iout leakage V Id = 10mA (see Fig.1 & 2) Id = Ishutdown (see Fig.1 & 2) Id = 14A, Vin = 0V Vout = 0V, Tj = 25oC Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vdg = 4.5V Icc off Icc on Icc ac Vdgl Idg leakage A V A Vih Vil Iin, on Vccuv+ VccuvInhyst. V A V Vin = 4V WWW.IRF.COM 3 IPS5451/IPS5451S Switching Electrical Characteristics Vcc = 14V, Resistive Load = 1, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Tr1 Tr2 Turn-on delay time Rise time to Vout = Vcc - 5V Rise time from the end of Tr1 to Vout = 90% of Vcc dV/dt (on) Turn ON d V/dt Eon Turn ON energy Td off Turn-off delay time Tf Fall time to V out = 10% of Vcc dV/dt (off) Turn OFF d V/dt Eoff Turn OFF energy Min. -- -- -- -- -- -- -- -- -- Typ. Max. Units Test Conditions 5 4 65 3 3 65 8 5 0.75 20 20 150 6 -- 150 20 10 -- s V/s mJ s V/s mJ See figure 4 See figure 3 Protection Characteristics Symbol Parameter T sd+ T sdI sd Iopen load T reset Tdg Over-temp. positive going threshold Over-temp. negative going threshold Over-current threshold Open load detection threshold Minimum time to reset protections Blanking time before considering Dg Min. -- -- 22 0.3 -- -- Typ. 165 158 35 1 50 7 Max. Units Test Conditions -- -- 50 2 -- 100 o o C C A A s s See fig. 2 See fig. 2 See fig. 2 Vin = 0V Part turned on with Vin =5V Functional Block Diagram All values are typical VCC 4.5 V 50V 4.2 V 62 V Under voltage lock out Charge pump 2.6 V IN 5.5V 200 K 2.0 V Level shift driver S Q Over current Over + 165C 158C DG 5.5V 40 R 35 A Tj + Open load 22 mV - temperature GND 4 VOUT WWW.IRF.COM IPS5451/IPS5451S Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out 12345 12345 5 Lead - TO220 IPS5451 Part Number 5 Lead - D2PAK (SMD220) IPS5451S T clamp Vin 5V 0V Vin Iout I shutdown OI t < T reset I shutdown t > T reset Iout ( + Vcc ) Out 0V T Tsd+ (160 ) T shutdown + V clamp T shutdown - ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram WWW.IRF.COM 5 IPS5451/IPS5451S Vin Vin Vcc 90% Vcc - 5V 90% Vout 10% Td on dV/dt on dV/dt off Vout 10% Tr 2 E1(t) Tr 1 Td off Tf Iout1 Eon1 Resistive load Inductive load Eon2 Iout2 E2 (t) Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Figure 4 - Switching times definition (turn-off) 1,00E-02 Vin = 5 V Dg Vcc IN Out Gnd + 1,00E-03 Vin Vout L 14 V - 1,00E-04 Vin = 0 V (sleep mode) R Iout 1,00E-05 5v 0v Rem : V load is negative during demagnetization 1,00E-06 0 5 10 15 20 25 30 35 Figure 5 - Active clamp test circuit Figure 6 - Icc (mA) Vs Vcc (V) 6 WWW.IRF.COM IPS5451/IPS5451S 50 40 30 20 10 0 -50 5 4 3 2 1 0 -50 -25 VIH VIL Hys teres is -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Figure 7 - Iin ( A ) Vs Tj (C) Figure 8 - VIH, VIL threshold ( V ) Vs Tj (C) 25 20 15 40 30 20 10 5 0 0 5 10 15 20 25 10 0 -50 -25 0 25 50 75 100 125 150 Figure 9 - Rdson (m) vs Vcc (V) Figure 10 - Rdson (m) vs Tj (C) WWW.IRF.COM 7 IPS5451/IPS5451S 25 1000 Tj=25oC Free air/ std footprint 20 15 100 10 Current path capacity should be above this curve 5 Load characteristic should be below this curve 10 10E+0 0 0 5 10 15 20 25 Figure 11 - Rdson (m) vs Iout (A) Figure 12 - Isd (A) vs Time (S) 50 40 30 25 20 rth = 5C/W rth = 15C/W rth = 30C/W T0220 free air 60C/W 30 15 20 10 5 0 -50 10 0 -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 Figure 13 - Isd (A) vs Tj (C) Figure 14 - Max. Cont. Ids ( A ) Vs Amb. Temperature ( C) 8 WWW.IRF.COM 100E+0 100E-6 100E-3 10E-6 10E-3 1E+0 1E-3 IPS5451/IPS5451S 100 single pulse 100 Hz rth=60C/W dT=25C 1kHz rth=60C/W dT=25C 10 0 10 10 1 0 .1 1 0 .0 1 Rth std footprint/TO220 freeair Rth junction to case 0.1 0 .0 0 1 0 .0 1 0 .1 1 10 100 Figure 15 -Max. I clamp ( A ) Vs Inductive Load ( m H ) Figure 16 - Transient Rth ( C/W ) Vs Time (s) 6 Eon Eoff 4 10000 I=Imax vs L (see fig.15) 1000 I=5 100 I=1A 2 10 1 0 0 5 10 15 20 25 0 0.01 0.10 1.00 10.00 100.00 Figure 17 - Eon, Eoff (mJ) vs Iout (A) Figure 18 - Eon @ Vcc=14V (mJ) vs Inductance (mH) WWW.IRF.COM 9 IPS5451/IPS5451S 2.00 30 1.50 20 1.00 10 0.50 0.00 -50 -25 0 25 50 75 100 125 150 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - I open load (A) vs Tj (C) Figure 20 - Iqc (A) vs Tj (C) Case Outline - TO220 (5 lead) IRGB 01-3042 01 10 WWW.IRF.COM IPS5451/IPS5451S Case Outline - D2PAK (SMD220) - 5 Lead 01-3066 00 WWW.IRF.COM 11 IPS5451/IPS5451S Tape & Reel - D2PAK (SMD220) - 5 Lead 01-3071 00 / 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 3/27/2000 12 WWW.IRF.COM |
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